Sub-terahertz emitters in BiCMOS technology with fundamental frequencies 250 GHz

We present voltage control oscillators based on a differential Colpitts oscillator topology with optimized emission frequency at the fundamental harmonic in a 130 nm SiGe BiCMOS technology. The source is designed to operate at 250 GHz and radiates up to 0.325 mW of propagating power. We present an e...

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Bibliographic Details
Published in2024 49th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz) pp. 1 - 2
Main Authors But, Dmytro B., Chernyadiev, Alexander V., Kolacinski, Cezary, Ikamas, Kestutis, Knap, Wojciech, Lisauskas, Alvydas
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.09.2024
Subjects
BiCMOS
BiCMOS integrated circuits
feedback
Frequency control
Harmonic analysis
Imaging
Oscillators
Silicon germanium
TeraFET
terahertz
Topology
VCO
Voltage control
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Summary:We present voltage control oscillators based on a differential Colpitts oscillator topology with optimized emission frequency at the fundamental harmonic in a 130 nm SiGe BiCMOS technology. The source is designed to operate at 250 GHz and radiates up to 0.325 mW of propagating power. We present an experimental study of the dynamic properties of electronic oscillators subjected to feedback radiation with its application to reflection-type coherent imaging.
ISSN:2162-2035
DOI:10.1109/IRMMW-THz60956.2024.10697811