Sub-terahertz emitters in BiCMOS technology with fundamental frequencies 250 GHz
We present voltage control oscillators based on a differential Colpitts oscillator topology with optimized emission frequency at the fundamental harmonic in a 130 nm SiGe BiCMOS technology. The source is designed to operate at 250 GHz and radiates up to 0.325 mW of propagating power. We present an e...
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Published in | 2024 49th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz) pp. 1 - 2 |
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Main Authors | , , , , , |
Format | Conference Proceeding |
Language | English |
Published |
IEEE
01.09.2024
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Subjects | |
Online Access | Get full text |
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Summary: | We present voltage control oscillators based on a differential Colpitts oscillator topology with optimized emission frequency at the fundamental harmonic in a 130 nm SiGe BiCMOS technology. The source is designed to operate at 250 GHz and radiates up to 0.325 mW of propagating power. We present an experimental study of the dynamic properties of electronic oscillators subjected to feedback radiation with its application to reflection-type coherent imaging. |
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ISSN: | 2162-2035 |
DOI: | 10.1109/IRMMW-THz60956.2024.10697811 |