Mapping of Semiconductor Electrical Properties with Terahertz Time-Domain Ellipsometry

Wafer-scale mapping of the electrical conductivity properties of a 4-inch silicon carbide (SiC) wafer using terahertz time-domain ellipsometry (THz-TDE) is demonstrated.

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Bibliographic Details
Published in2024 49th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz) pp. 1 - 2
Main Authors Agulto, Verdad C., Iwamoto, Toshiyuki, Zhao, Zixi, Liu, Shuang, Kato, Kosaku, Nakajima, Makoto
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.09.2024
Subjects
Conductivity
Drude
Electronics industry
Ellipsometry
facet
Failure analysis
Graphical models
Monitoring
Nondestructive testing
Production
SiC
Silicon carbide
THz-TDS
Time-domain analysis
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Summary:Wafer-scale mapping of the electrical conductivity properties of a 4-inch silicon carbide (SiC) wafer using terahertz time-domain ellipsometry (THz-TDE) is demonstrated.
ISSN:2162-2035
DOI:10.1109/IRMMW-THz60956.2024.10697746