Simulation of Chip Surface Damage of PP-IGBT Under Electro-Thermal-Mechanical Loading Condition

Insulated Gate Bipolar Transistor (IGBT) is a fully controlled power semiconductor device, which is the core device for energy conversion and transmission, and is called the CPU of power electronic devices. It is widely used in engineering applications such as AC transmission, photovoltaic access an...

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Bibliographic Details
Published in2024 25th International Conference on Electronic Packaging Technology (ICEPT) pp. 1 - 5
Main Authors Qi, Yunzhi, An, Tong, Qin, Fei
Format Conference Proceeding
LanguageEnglish
Published IEEE 07.08.2024
Subjects
Couplings
cumulative damage
Deformation
electro-thermal-mechanical coupling
Finite element analysis
Insulated gate bipolar transistors
Power systems
PP-IGBT
Temperature distribution
Thermal expansion
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Summary:Insulated Gate Bipolar Transistor (IGBT) is a fully controlled power semiconductor device, which is the core device for energy conversion and transmission, and is called the CPU of power electronic devices. It is widely used in engineering applications such as AC transmission, photovoltaic access and other power systems. Fretting wear is one of the most common failure modes of PP-IGBT modules. During the turn-on and turn-off process of the PP-IGBT module, the IGBT chip is affected by the thermal stress caused by the extrusion of the Mo layer, the expansion and contraction of the interface material, and the lateral and longitudinal fretting displacements occur. The IGBT chip and the surface are destroyed, which eventually leads to the failure of the IGBT chip. In this paper, the electric-thermal-mechanical coupling model of PP-IGBT is established by finite element method, and the contact stress, temperature and relative displacement field of the model are calculated. The cumulative damage of the Al metallized plate on the chip surface was calculated by the stress field and displacement field. The results of the finite element analysis model show that the temperature of the IGBT chip changes periodically with the power on and off. The highest temperature appears in the active region of the chip center. The maximum contact stress of the PP-IGBT device appears in the center of the chip, and the maximum relative displacement appears at the boundary.
ISSN:2836-9734
DOI:10.1109/ICEPT63120.2024.10668578