Pb-catalyzed GaAs nanowires grown by molecular beam epitaxy on Si substrate

For n-type doping of A3B5 semiconductors silicon are commonly used. However, Si in A3B5 nanowire is p-type dopant. Species are incorporated into nanowire through the intermediate liquid phase. Solubility of metals in catalyst are usually much more than nitrogen family elements. Nitrogen family eleme...

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Bibliographic Details
Published in2024 International Conference Laser Optics (ICLO) p. 354
Main Authors Shtrom, I.V., Sibirev, N.V., Ilkiv, I.V., Soshnikov, I.P., Reznik, R.R., Cirlin, G. E.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.07.2024
Subjects
catalyst
Catalysts
doping
GaAs nanowires
Gallium arsenide
Lead
Molecular beam epitaxial growth
molecular beam epitaxy
n-type
Optics
p-type
Silicon
Tin
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Summary:For n-type doping of A3B5 semiconductors silicon are commonly used. However, Si in A3B5 nanowire is p-type dopant. Species are incorporated into nanowire through the intermediate liquid phase. Solubility of metals in catalyst are usually much more than nitrogen family elements. Nitrogen family elements easily dissolve in metal carbon family elements such as lead and tin. Here we discuss the growth of GaAs nanowires with lead catalyst on Si substrate. Lead could easily dissolve nitrogen family elements as well as boron family elements, which allows to switch nanowire growth from metal-rich to pnictide-rich growth.
ISSN:2642-5580
DOI:10.1109/ICLO59702.2024.10624345