Parasitic Parameters Identification of High-Frequency Transformers Including Both Inductive and Capacitive Effects

• Published in: 2024 IEEE 7th International Electrical and Energy Conference (CIEEC) pp. 2489 - 2494
• Main Authors: Li, Hailin, Zhang, Bo, Si, Zhilei, Liu, Lulu, Xia, Kepeng, Liu, Kun
• Format: Conference Proceeding
• Language: English
• Published: IEEE 10.05.2024
• Subjects: Capacitance; displacement current; High-frequency transformers; Inductance; Magnetic domains; Parameter estimation; Parasitic parameters; Performance analysis; Power electronics; quasi-static model
• DOI: 10.1109/CIEEC60922.2024.10583455

This paper is concerned with the parasitic parameters identification of the high-frequency transformers (HFTs), namely the magnetization inductance. With the rapid increase of the operating frequency of the power electronic switches, parasitic effects are getting more and more important as well as the displacement current which is unreasonable to be neglected in the high-frequency range. Unlike the traditional way to identify these parameters by solving the electro-quasistatic or the magneto-quasistatic Maxwell models respectively, the A- V model coupling with the electric circuit in the frequency domain is employed to consider the displacement current. Then, the electric field and magnetic field can be solved simultaneously to study the capacitive and inductive effects. The parasitic parameters of a 2-dimensional HFT changing with the frequency are studied by involving the displacement current, and results are compared with those solved by the magneto-quasistatic models in the paper. It is shown that the parasitic parameters extracted by using the A- V model show quite a different characteristic compared with the traditional method. It is helpful for the design and better understanding of the performance analysis of HFT.