High- Temperature Characterization of a Novel Junction Barrier Schottky Diode with Multi-Step Trenched Structure

• Published in: 2024 IEEE 7th International Electrical and Energy Conference (CIEEC) pp. 2129 - 2132
• Main Authors: Li, Yanqiu, Wang, Zhiqiang, Wu, Yunchan, Yu, Shenxu, Xin, Guoqing, Shi, Xiaojie
• Format: Conference Proceeding
• Language: English
• Published: IEEE 10.05.2024
• Subjects: Characterization; Density measurement; Performance evaluation; Power system measurements; Schottky diode; Schottky diodes; Silicon carbide; Temperature; Voltage

In this paper, a Schottky diode with a new structure is introduced, and four other commercial devices with different structures are selected and compared by high-temperature static and dynamic characterization. Devices with new structures have outstanding advantages in static performance and have go...