High- Temperature Characterization of a Novel Junction Barrier Schottky Diode with Multi-Step Trenched Structure

In this paper, a Schottky diode with a new structure is introduced, and four other commercial devices with different structures are selected and compared by high-temperature static and dynamic characterization. Devices with new structures have outstanding advantages in static performance and have go...

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Bibliographic Details
Published in2024 IEEE 7th International Electrical and Energy Conference (CIEEC) pp. 2129 - 2132
Main Authors Li, Yanqiu, Wang, Zhiqiang, Wu, Yunchan, Yu, Shenxu, Xin, Guoqing, Shi, Xiaojie
Format Conference Proceeding
LanguageEnglish
Published IEEE 10.05.2024
Subjects
Characterization
Density measurement
Performance evaluation
Power system measurements
Schottky diode
Schottky diodes
Silicon carbide
Temperature
Voltage
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Summary:In this paper, a Schottky diode with a new structure is introduced, and four other commercial devices with different structures are selected and compared by high-temperature static and dynamic characterization. Devices with new structures have outstanding advantages in static performance and have good high temperature stability.
DOI:10.1109/CIEEC60922.2024.10583312