BEOL Compatible (< 400 °C) Novel Cross-Point RRAM Based Resistive Hydrogen Sensor for Downstream Hydrogen Use

We present a novel Pd/Ta 2 O 5 /TiW cross-point resistive random-access memory (RRAM) based hydrogen gas (H 2 ) leakage sensor with a low thermal budget (< 400 °C). This cost-effective, low power cross-point RRAM device with Pd sensing electrode and atomic layer deposited (ALD) Ta 2 O 5 layer ena...

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Bibliographic Details
Published in2023 22nd International Conference on Solid-State Sensors, Actuators and Microsystems (Transducers) pp. 1939 - 1941
Main Authors Samanta, Subhranu, Chen, Zhixian, Ng, Doris K. T., Chen, Weiguo, Xu, Linfang, Kai, Fuu Ming, Zhu, Yao
Format Conference Proceeding
LanguageEnglish
Published IEEJ 25.06.2023
Subjects
Cross-point RRAM
Hydrogen
Hydrogen sensor
Insulators
Low thermal budget
Micromechanical devices
Oxidation
Temperature sensors
Thermal resistance
Transducers
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Summary:We present a novel Pd/Ta 2 O 5 /TiW cross-point resistive random-access memory (RRAM) based hydrogen gas (H 2 ) leakage sensor with a low thermal budget (< 400 °C). This cost-effective, low power cross-point RRAM device with Pd sensing electrode and atomic layer deposited (ALD) Ta 2 O 5 layer enables faster response time (t 90% ~ 5 sec for 2 vol.% H 2 ) at room temperature for any back end of line (BEOL) compatible (< 400 °C) RRAM-based H 2 sensor. It does not require the warm-up and oxidation of insulator (Ta 2 O 5 ) layer prior to the H 2 detection, indicating its high potential for hydrogen leakage sensor applications.
ISSN:2167-0021