BEOL Compatible (< 400 °C) Novel Cross-Point RRAM Based Resistive Hydrogen Sensor for Downstream Hydrogen Use
We present a novel Pd/Ta 2 O 5 /TiW cross-point resistive random-access memory (RRAM) based hydrogen gas (H 2 ) leakage sensor with a low thermal budget (< 400 °C). This cost-effective, low power cross-point RRAM device with Pd sensing electrode and atomic layer deposited (ALD) Ta 2 O 5 layer ena...
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Published in | 2023 22nd International Conference on Solid-State Sensors, Actuators and Microsystems (Transducers) pp. 1939 - 1941 |
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Main Authors | , , , , , , |
Format | Conference Proceeding |
Language | English |
Published |
IEEJ
25.06.2023
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Subjects | |
Online Access | Get full text |
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Summary: | We present a novel Pd/Ta 2 O 5 /TiW cross-point resistive random-access memory (RRAM) based hydrogen gas (H 2 ) leakage sensor with a low thermal budget (< 400 °C). This cost-effective, low power cross-point RRAM device with Pd sensing electrode and atomic layer deposited (ALD) Ta 2 O 5 layer enables faster response time (t 90% ~ 5 sec for 2 vol.% H 2 ) at room temperature for any back end of line (BEOL) compatible (< 400 °C) RRAM-based H 2 sensor. It does not require the warm-up and oxidation of insulator (Ta 2 O 5 ) layer prior to the H 2 detection, indicating its high potential for hydrogen leakage sensor applications. |
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ISSN: | 2167-0021 |