Characteristics of 30 GHz MMIC Receivers for Satellite Feed Array Application
RF characteristics of a 30 GHz "front-end" receiver incorporating three monolithic chips are presented. The ion-implanted GaAs MMIC chips include a 7 dB noise figure, 10 dB gain front-end amplifier, a 5-bit phase shifter and a 12 dB gain control amplifier. All three functions are accomplis...
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Published in | 1987 IEEE GaAs IC Symposium Technical Digest pp. 155 - 158 |
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Main Authors | , , , , |
Format | Conference Proceeding |
Language | English |
Published |
IEEE
01.10.1987
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Subjects | |
Online Access | Get full text |
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Summary: | RF characteristics of a 30 GHz "front-end" receiver incorporating three monolithic chips are presented. The ion-implanted GaAs MMIC chips include a 7 dB noise figure, 10 dB gain front-end amplifier, a 5-bit phase shifter and a 12 dB gain control amplifier. All three functions are accomplished at the receive frequency (27.5 - 30 GHz). Data presented for the interconnected receiver includes gain/loss measurements, relative phase shift measurements and noise figure. Characteristics from three such recieve modules are summarized and discussed. |
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ISBN: | 9781958504048 1958504041 |
DOI: | 10.1109/GAAS.1987.10399605 |