Characteristics of 30 GHz MMIC Receivers for Satellite Feed Array Application

RF characteristics of a 30 GHz "front-end" receiver incorporating three monolithic chips are presented. The ion-implanted GaAs MMIC chips include a 7 dB noise figure, 10 dB gain front-end amplifier, a 5-bit phase shifter and a 12 dB gain control amplifier. All three functions are accomplis...

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Bibliographic Details
Published in1987 IEEE GaAs IC Symposium Technical Digest pp. 155 - 158
Main Authors Geddes, J., Sokolov, V., Carlson, D., Bauhahn, P., Romanofsky, R.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.10.1987
Subjects
Gain
Gain control
Gallium arsenide
Logic gates
Noise figure
Phase shifters
Receivers
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Summary:RF characteristics of a 30 GHz "front-end" receiver incorporating three monolithic chips are presented. The ion-implanted GaAs MMIC chips include a 7 dB noise figure, 10 dB gain front-end amplifier, a 5-bit phase shifter and a 12 dB gain control amplifier. All three functions are accomplished at the receive frequency (27.5 - 30 GHz). Data presented for the interconnected receiver includes gain/loss measurements, relative phase shift measurements and noise figure. Characteristics from three such recieve modules are summarized and discussed.
ISBN:9781958504048
1958504041
DOI:10.1109/GAAS.1987.10399605