100 mm GaAs Substrates for Mimic Manufacturing

In order to assess the quality of available 100 mm GaAs substrates, arrays of test transistors were processed on four wafers supplied by three different vendors. Both dc and RF device parameters of the transistors were measured, and the results compared to values typically obtained on 3-inch start i...

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Bibliographic Details
Published in1987 IEEE GaAs IC Symposium Technical Digest pp. 037 - 040
Main Authors O'Connor, J. M., Dvorsky, E. F., Kronwasser, J. A., Pearah, P. J., Gilbert, J.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.10.1987
Subjects
Gallium arsenide
MESFETs
Radio frequency
Substrates
Tail
Transconductance
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Summary:In order to assess the quality of available 100 mm GaAs substrates, arrays of test transistors were processed on four wafers supplied by three different vendors. Both dc and RF device parameters of the transistors were measured, and the results compared to values typically obtained on 3-inch start ing material. The best device results from the 100 mm starting material were comparable to typical values for devices fabricated on 3-inch material; however, the mean values of transconductance (gm), saturation current (Id ss ) and maximum available RF gain at 10 GHz were lower. The standard deviations for all of these parameters was also larger for FETs fabricated on 100 mm material. Our results indicated that 100 mm GaAs substrates are promi sing candidates for GaAs pilot line production.
ISBN:9781958504048
1958504041
DOI:10.1109/GAAS.1987.10399572