High power 1550 nm twin-photodetector modules with 45 GHz bandwidth based on InP

In summary we fabricated and characterized integrated differential photodetector modules with 35 GHz and 45 GHz electrical bandwidth. The devices show total responsivities of 0.41 A/W and 0.31 A/W respectively and PDL of less than 0.5 dB. The ratio of the photocurrents remains below 0.5 dB for diffe...

Full description

Saved in:
Bibliographic Details
Published inOptical Fiber Communication Conference and Exhibit pp. 274 - 276
Main Authors Beling, A., Schmidt, D., Bach, H.-G., Mekonnen, G.G., Ziegler, R., Eisner, V., Stollberg, M., Jacumeit, G., Gottwald, E., Weiske, C.-J.
Format Conference Proceeding
LanguageEnglish
Published IEEE 2002
Subjects
Bandwidth
Germanium silicon alloys
Indium phosphide
Optical polarization
Optical pulses
Optical switches
Page description languages
Photoconductivity
Photodetectors
Silicon germanium
Online AccessGet full text

Cover

More Information
Summary:In summary we fabricated and characterized integrated differential photodetector modules with 35 GHz and 45 GHz electrical bandwidth. The devices show total responsivities of 0.41 A/W and 0.31 A/W respectively and PDL of less than 0.5 dB. The ratio of the photocurrents remains below 0.5 dB for different states of polarization demonstrating an excellent electrical and optical symmetry. The modules deliver high electrical output pulses of differential polarity in the 1 Volt regime to switch directly all known 40 Gbit/s demux electronics implemented in SiGe, GaAs or InP technology.
ISBN:9781557527011
1557527016
DOI:10.1109/OFC.2002.1036357