Lg = 60 nm In0.53 Ga0.47 As MBCFETs: From gmmax = 13.7 mS/üm and Q = 180 to virtual-source modeling
In this paper, we report scalable 5 -level stacked gate-all-around (GAA) In 0.53 Ga0.47As multi-bridge channel FETs (MBCFETs), with careful attention paid to fluorine migration. At its heart, we maintained temperature of all the unit process steps below 300 °C and inserted an n-InP ledge into a top...
Saved in:
Published in | 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) pp. 1 - 2 |
---|---|
Main Authors | , , , , , , , , , , , , , , , , , , , , , , , , , , |
Format | Conference Proceeding |
Language | English |
Published |
JSAP
11.06.2023
|
Subjects | |
Online Access | Get full text |
Cover
Loading…
Summary: | In this paper, we report scalable 5 -level stacked gate-all-around (GAA) In 0.53 Ga0.47As multi-bridge channel FETs (MBCFETs), with careful attention paid to fluorine migration. At its heart, we maintained temperature of all the unit process steps below 300 °C and inserted an n-InP ledge into a top {In}_{0.52}\mathrm{Al}_{0.48}\mathrm{As} sacrificial layer to suppress \mathrm{F}^{-}-induced donor passivation. In addition, we used a selectively regrown n+{In}_{0.53}\mathrm{Ga}_{0.47} As contact formation by MOCVD and precision dry etching. The dry etching process resulted in a highly vertical etching slope along both the \mathrm{S}/\mathrm{D} and W g directions. The fabricated L_{g}=60\mathrm{~nm} MBCFET showed a record combination of S=76\mathrm{mV}/\mathrm{dec},g_{m_{-}\max}=13.7 \mathrm{mS}/\mu\mathrm{m},I_{ON}=2.24\mathrm{~mA}/\mu\mathrm{m} and Q=180 at V_{DS}=0.5\mathrm{~V}. |
---|---|
ISSN: | 2158-9682 |
DOI: | 10.23919/VLSITechnologyandCir57934.2023.10185250 |