Lg = 60 nm In0.53 Ga0.47 As MBCFETs: From gmmax = 13.7 mS/üm and Q = 180 to virtual-source modeling

• Published in: 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) pp. 1 - 2
• Main Authors: Yoo, J.-H., Jo, H.-B., Lee, I.-G., Choi, S.-M., Baek, J.-M., Lee, S T., Jang, H., Kong, M W., Kim, H H., Lee, H J., Kim, H.-J., Jeong, H.-S., Park, W.-S., Ko, D H., Shin, S. H., Kwon, H.-M., Kim, S K., Kim, J G., Yun, J., Kim, T., Shin, K.-Y., Kim, T.-W., Shin, J.-K., Lee, J.-H., Shin, C.-S., Seo, K.-S., Kim, D.-H.
• Format: Conference Proceeding
• Language: English
• Published: JSAP 11.06.2023
• Subjects: Dry etching; Field effect transistors; Fluorine; Gallium arsenide; Heart; Logic gates; Very large scale integration
• ISSN: 2158-9682
• DOI: 10.23919/VLSITechnologyandCir57934.2023.10185250

In this paper, we report scalable 5 -level stacked gate-all-around (GAA) In 0.53 Ga0.47As multi-bridge channel FETs (MBCFETs), with careful attention paid to fluorine migration. At its heart, we maintained temperature of all the unit process steps below 300 °C and inserted an n-InP ledge into a top {In}_{0.52}\mathrm{Al}_{0.48}\mathrm{As} sacrificial layer to suppress \mathrm{F}^{-}-induced donor passivation. In addition, we used a selectively regrown n+{In}_{0.53}\mathrm{Ga}_{0.47} As contact formation by MOCVD and precision dry etching. The dry etching process resulted in a highly vertical etching slope along both the \mathrm{S}/\mathrm{D} and W g directions. The fabricated L_{g}=60\mathrm{~nm} MBCFET showed a record combination of S=76\mathrm{mV}/\mathrm{dec},g_{m_{-}\max}=13.7 \mathrm{mS}/\mu\mathrm{m},I_{ON}=2.24\mathrm{~mA}/\mu\mathrm{m} and Q=180 at V_{DS}=0.5\mathrm{~V}.