1700 V-IGBT3: field stop technology with optimized trench structure $trend setting for the high power applications in industry and traction

• Published in: Proceedings of the 14th International Symposium on Power Semiconductor Devices and Ics pp. 105 - 108
• Main Authors: Pfaffenlehner, M., Laska, T., Mallwitz, R., Mauder, A., Pfirsch, F., Schaeffer, C.
• Format: Conference Proceeding
• Language: English
• Published: IEEE 2002
• Subjects: Conductivity; Current density; Insulated gate bipolar transistors; Switching loss; Temperature; Voltage

The IGBT3 technology, which combines a specific trench cell and the field stop concept, was first introduced for devices with 1200 V blocking voltage. It is now transferred to higher blocking voltage ratings. A new series of 1700 V devices is introduced, which compared with conventional NPT (= non p...