1700 V-IGBT3: field stop technology with optimized trench structure $trend setting for the high power applications in industry and traction

The IGBT3 technology, which combines a specific trench cell and the field stop concept, was first introduced for devices with 1200 V blocking voltage. It is now transferred to higher blocking voltage ratings. A new series of 1700 V devices is introduced, which compared with conventional NPT (= non p...

Full description

Saved in:
Bibliographic Details
Published inProceedings of the 14th International Symposium on Power Semiconductor Devices and Ics pp. 105 - 108
Main Authors Pfaffenlehner, M., Laska, T., Mallwitz, R., Mauder, A., Pfirsch, F., Schaeffer, C.
Format Conference Proceeding
LanguageEnglish
Published IEEE 2002
Subjects
Conductivity
Current density
Insulated gate bipolar transistors
Switching loss
Temperature
Voltage
Online AccessGet full text

Cover

More Information
Summary:The IGBT3 technology, which combines a specific trench cell and the field stop concept, was first introduced for devices with 1200 V blocking voltage. It is now transferred to higher blocking voltage ratings. A new series of 1700 V devices is introduced, which compared with conventional NPT (= non punch through) devices has greatly reduced static and dynamic losses and preserves the well known ruggedness of NPT devices. With this new 1700 V chip generation a new product line of modules with up to 50% higher current capability in the same housing is available.
ISBN:0780373189
9780780373181
DOI:10.1109/ISPSD.2002.1016182