1700 V-IGBT3: field stop technology with optimized trench structure $trend setting for the high power applications in industry and traction
The IGBT3 technology, which combines a specific trench cell and the field stop concept, was first introduced for devices with 1200 V blocking voltage. It is now transferred to higher blocking voltage ratings. A new series of 1700 V devices is introduced, which compared with conventional NPT (= non p...
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Published in | Proceedings of the 14th International Symposium on Power Semiconductor Devices and Ics pp. 105 - 108 |
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Main Authors | , , , , , |
Format | Conference Proceeding |
Language | English |
Published |
IEEE
2002
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Subjects | |
Online Access | Get full text |
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Summary: | The IGBT3 technology, which combines a specific trench cell and the field stop concept, was first introduced for devices with 1200 V blocking voltage. It is now transferred to higher blocking voltage ratings. A new series of 1700 V devices is introduced, which compared with conventional NPT (= non punch through) devices has greatly reduced static and dynamic losses and preserves the well known ruggedness of NPT devices. With this new 1700 V chip generation a new product line of modules with up to 50% higher current capability in the same housing is available. |
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ISBN: | 0780373189 9780780373181 |
DOI: | 10.1109/ISPSD.2002.1016182 |