Low dark current backside-illuminated photodiode for 200 Gb/s operation with 40 μm wide alignment tolerance

A backside-illuminated photodiode employing a semiconductor-buried structure is demonstrated at 200 Gb/s. The photodiode exhibited a 3dB bandwidth of 65 GHz, an effective aperture of 40 μm, and a dark current of 1 pA.

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Bibliographic Details
Published in2023 Optical Fiber Communications Conference and Exhibition (OFC) pp. 1 - 3
Main Authors Takemura, Ryota, Tsubouchi, Daiki, Ohno, Akihito, Yamauchi, Yasuhiro
Format Conference Proceeding
LanguageEnglish
Published OSA 01.03.2023
Subjects
Apertures
Bandwidth
Dark current
Lenses
Optical fiber communication
Photodiodes
Reliability
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Summary:A backside-illuminated photodiode employing a semiconductor-buried structure is demonstrated at 200 Gb/s. The photodiode exhibited a 3dB bandwidth of 65 GHz, an effective aperture of 40 μm, and a dark current of 1 pA.
DOI:10.1364/OFC.2023.W1A.6