Avoiding Plasma Damage: MacEtch enabled β-Ga2O3 FinFETs for On-Resistance Reduction and Hysteresis Elimination

Although highly promising, the performance of \upbeta - Ga2O3 transistors are far from their theoretical potentials. Structural innovations by adopting the FinFET geometry remains a relatively virgin field for this material. Here we report the results and discuss the prospect of \upbeta-\text{Ga}_{2...

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Bibliographic Details
Published in2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) pp. 1 - 3
Main Authors Huang, Hsien-Chih, Ren, Zhongjie, Anhar Uddin Bhuiyan, A F M, Feng, Zixuan, Luo, Xixi, Huang, Alex Q., Zhao, Hongping, Li, Xiuling
Format Conference Proceeding
LanguageEnglish
Published IEEE 07.03.2023
Subjects
Etching
FinFETs
Geometry
MacEtch and FinFET
Manufacturing
Plasmas
Technological innovation
upbeta-\text{Ga}_{2}\mathrm{O}_{3}
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Summary:Although highly promising, the performance of \upbeta - Ga2O3 transistors are far from their theoretical potentials. Structural innovations by adopting the FinFET geometry remains a relatively virgin field for this material. Here we report the results and discuss the prospect of \upbeta-\text{Ga}_{2}\mathrm{O}_{3} FinFETs fabricated by the plasma-free highly anisotropic metal-assisted chemical etching (MacEtch) method. A specific on-resistance (\mathrm{R}_{\text{on},\text{sp}}) of 6.5 \mathrm{m}\Omega\cdot \text{cm}^{2} and a 370 V breakdown voltage are achieved. The MacEtch-formed FinFETs demonstrate near-zero (9.7 mV) hysteresis.
DOI:10.1109/EDTM55494.2023.10103115