Evidence of Mn-Ion Structural Displacements Correlated to Oxygen Vacancies in La0.7Sr0.3MnO3 Interfacial Dead Layers

• Published in: ACS applied materials & interfaces Vol. 13; no. 46; pp. 55666 - 55675
• Main Authors: Rajak, Piu, Knez, Daniel, Chaluvadi, Sandeep Kumar, Orgiani, Pasquale, Rossi, Giorgio, Méchin, Laurence, Ciancio, Regina
• Format: Journal Article
• Language: English
• Published: Washington, D.C. : American Chemical Society 24.11.2021
• Subjects: Condensed Matter; Electronics; Engineering Sciences; Materials Science; Micro and nanotechnologies; Microelectronics; Physics; oxygen vacancy; Aberration-corrected scanning transmission electron microscopy; dead layer; EELS and EDS; density functional theory (DFT); multislice image simulation
• ISSN: 1944-8244; 1944-8252
• DOI: 10.1021/acsami.1c15599

Properties of half-metallic manganite thin films depend on the composition and structure in the atomic scale, and consequently, their potential functional behaviour can only be based on fine structure characterization. By combining advanced transmission electron microscopy methods, electron energy loss spectroscopy, density functional theory (DFT) calculations, and multislice image simulations, we obtained evidence of a 7 nm-thick interface layer in La0.7Sr0.3MnO3 (LSMO) thin films, compatible with the formation of well-known dead layers in manganites, with an elongated out-of-plane lattice parameter, and structural and electronic properties well distinguished from the bulk of the film. We observed, for the first time, a structural shift of Mn ions coupled with oxygen vacancies and a reduced Mn valence state within such layer. Understanding the correlation between oxygen vacancies, the Mn oxidation state, and Mn ions displacements is a prerequisite to engineer the magneto-transport properties of LSMO thin films.