Low-temperature characterization and modeling of advanced GeOI pMOSFETs : mobility mechanism and origin of the parasitic conduction

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Bibliographic Details
Published inSolid-state electronics Vol. 54; no. 2; pp. 205 - 212
Main Authors den Daele W., Van, Augendre, E., Royer C., Le, J.-F., Damlencourt, Grandchamp, B., Cristoloveanu, S.
Format Journal Article
LanguageEnglish
Published Elsevier 2010
Subjects
Condensed Matter
Engineering Sciences
Micro and nanotechnologies
Microelectronics
Other
Physics
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ISSN:0038-1101