94GHz silicon co-integrated LNA and antenna in a mm-wave dedicated BiCMOS technology

• Published in: Proceedings RFIC 2010: IEEE Radio frequency Integrated Circuits Symposium pp. 83 - 86
• Main Authors: Pilard, Romain, Gloria, Daniel, Gianessello, Frederic, Le Pennec, François, Person, Christian
• Format: Conference Proceeding
• Language: English
• Published: 2010
• Subjects: Electronics; Engineering Sciences; Dipole antennas; Power consumption; BiCMOS integrated circuits; Millimetre wave integrated circuits; Heterojunction bipolar transistors; Low noise amplifiers
• ISBN: 9781424462407; 1424462401
• DOI: 10.1109/RFIC.2010.5477390

A co-integrated Low Noise Amplifier (LNA) with a dipole antenna is designed considering a millimeter-wave dedicated BiCMOS technology. The targeted application is a 94 GHz passive imaging for security applications. The LNA is based on a high-speed SiGe:C 130 nm HBT. The interest of the co-integration on a common silicon substrate is demonstrated through the decrease of insertion losses between the antenna and the amplifier. The capability of the BiCMOS9MW technology is illustrated to achieve this co-integration reaching a total gain of 3.0 dB (Gantenna + GLNA) for a power consumption of 11 mW, in a single-stage LNA configuration. A two-stage configuration achieves a total gain of 8.5 dB with a power consumption of 21 mW.