Hydrogen implantation-induced blistering in diamond : towards diamond layer transfer by the Smart CutTM technique

The effect of H$^+$ implantation and annealing of diamond (100) monocrystalline substrates has been studied by ToFSIMS,cathodoluminescence, transmission spectroscopy and TEM. Blistering conditions suitable for the Smart Cut$^{TM}$technology have been identified in monocrystalline diamond, using two...

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Bibliographic Details
Published inDiamond and related materials Vol. 126
Main Authors Masante, Cédric, de Vecchy, Jon, Mazen, Frédéric, Milesi, Frederic, Di Cioccio, Léa, Pernot, Julien, Lloret, Fernando, Araujo, Daniel, Pinero, José Carlos, Rochat, Névine, Pierre, Francois, Servant, Florence, Widiez, Julie
Format Journal Article
LanguageEnglish
Published Elsevier 2022
Subjects
Chemical Sciences
Electronics
Engineering Sciences
Material chemistry
Micro and nanotechnologies
Microelectronics
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Summary:The effect of H$^+$ implantation and annealing of diamond (100) monocrystalline substrates has been studied by ToFSIMS,cathodoluminescence, transmission spectroscopy and TEM. Blistering conditions suitable for the Smart Cut$^{TM}$technology have been identified in monocrystalline diamond, using two sets of hydrogen implantation and annealing.A first hydrogen implantation followed by a first annealing leads to amorphization of a buried layer without hydrogenexodiffusion. Blisters and exfoliations appear at the surface of the diamond samples after a second hydrogen implantationinside the pre-amorphized diamond layer and a final annealing, as evidenced by TEM and optical microscopy.Demonstration of hydrogen-induced blistering is a major step to adapt the Smart Cut$^{TM}$ process on diamond material.This process is compatible with wafer bonding before the second annealing and therefore open the way for thin diamondlayer transfer, still not achieved to date.
ISSN:0925-9635
DOI:10.1016/j.diamond.2022.109085