Magnetic, Antiferroelectric-like Behavior and Resistance Switching Properties in BiFeO[sub.3]-CaMnO[sub.3] Polycrystalline Thin Films

The effect of ferromagnetic CaMnO[sub.3] (CMO) addition to structural, magnetic, dielectric, and ferroelectric properties of BiFeO[sub.3] is presented. X-ray diffraction and Raman investigation allowed the identification of a single pseudocubic perovskite structure. The magnetic measurement showed t...

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Published inMaterials Vol. 16; no. 23
Main Authors Lahmar, Abdelilah, Zidani, Jacem, Belhadi, Jamal, Alaoui, Ilham Hamdi, Musleh, Hussam, Asad, Jehad, Al Dahoudi, Naji, El Marssi, Mimoun
Format Journal Article
LanguageEnglish
Published MDPI AG 01.11.2023
Subjects
Dielectric films
Diffraction
Ferromagnetism
Magnetization
Perovskite
Thin films
X-rays
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Summary:The effect of ferromagnetic CaMnO[sub.3] (CMO) addition to structural, magnetic, dielectric, and ferroelectric properties of BiFeO[sub.3] is presented. X-ray diffraction and Raman investigation allowed the identification of a single pseudocubic perovskite structure. The magnetic measurement showed that the prepared films exhibit a ferromagnetic behavior at a low temperature with both coercive field and remnant magnetization increased with increasing CMO content. However, a deterioration of magnetization was observed at room temperature. Ferroelectric study revealed an antiferroelectric-like behavior with a pinched P–E hysteresis loop for 5% CMO doping BFO, resulting in low remnant polarization and double hysteresis loops. Whereas, high remnant polarization and coercive field with a likely square hysteresis loop are obtained for 10% CMO addition. Furthermore, a bipolar resistive switching behavior with a threshold voltage of about 1.8 V is observed for high doped film that can be linked to the ferroelectric polarization switching.
ISSN:1996-1944
1996-1944
DOI:10.3390/ma16237392