Investigations of Nanoscale Columnar Al[sub.x]Ga[sub.1-x]N/AlN Heterostructures Grown on Silicon Substrates with Different Modifications of the Surface

• Published in: Photonics Vol. 10; no. 11
• Main Authors: Seredin, Pavel Vladimirovich, Kurilo, Nikolay, Goloshchapov, Dmitry L, Kashkarov, Vladimir, Lenshin, Aleksandr S, Buylov, Nikita, Nesterov, Dmitry, Mizerov, Andrey, Kukushkin, Sergey A, Timoshnev, S, Shubina, K. Yu, Sobolev, M. S
• Format: Journal Article
• Language: English
• Published: MDPI AG 01.10.2023
• Subjects: Epitaxy; Field-effect transistors; Silicon; Russia
• ISSN: 2304-6732; 2304-6732
• DOI: 10.3390/photonics10111209

The growth of nanoscale columnar Al[sub.x]Ga[sub.1-x]N/AlN heterostructures on the surface of silicon substrates using plasma-activated nitrogen molecular-beam epitaxy was investigated in this work. Silicon substrates include atomic-smooth cSi substrate, Si substrate with a transition layer of porous silicon porSi/cSi and a hybrid substrate involving a silicon carbide layer grown with matched substitution of the atoms on the surface of porous silicon SiC/porSi/cSi. A complex analysis performed using a set of structural and spectroscopic techniques demonstrated that the epitaxial growth of the nuclear AlN layer on all types of the substrates in a N-enriched environment resulted in the formation of Al[sub.x]Ga[sub.1-x]N/AlN heterostructures with a Ga-polar surface, which was realized only on the SiC/porSi/cSi substrate. The layer of Al[sub.x]Ga[sub.1-x]N on cSi and porSi/cSi substrates was in the state of disordered alloy with an excess of gallium atom content. It was shown that a great difference in the lattice parameters of a substrate–film pair resulted not only in the appearance of a number of various defects but also in a considerable effect on the chemical process of the formation of the alloys, in our case, the Al[sub.x]Ga[sub.1-x]N alloy. It was shown that nanoscale columns of Al[sub.x]Ga[sub.1-x]N formed on SiC/porSi/cSi substrate were inclined relative to the c-axis, which was connected with the features of the formation of a SiC layer by the matched substitution of the atoms on the porous Si substrate, resulting in the formation of the inclined (111) SiC facets at the boundary of the (111) Si surface and pores in Si. Optical studies of the grown samples demonstrated that the optical band-to-band transition for the AlxGa1-xN alloy with E[sub.g] = 3.99 eVB was observed only for the heterostructure grown on the SiC/porSi/cSi substrate. A qualitative model is proposed to explain the difference in the formation of Al[sub.x]Ga[sub.1-x]N layers on the substrates of cSi, porSi/cSi and SiC/porSi/cSi. The results obtained in our work demonstrate the availability of using SiC/porSi/cSi substrates for the integration of silicon technology and that used for the synthesis of nanoscale columnar Al[sub.x]Ga[sub.1-x]N heterostructures using plasma-activated molecular-beam epitaxy with a nitrogen source.