Crack-Free High-Composition

• Published in: Crystals (Basel) Vol. 13; no. 10
• Main Authors: Mukhopadhyay, Swarnav, Liu, Cheng, Chen, Jiahao, Tahmidul Alam, Md, Sanyal, Surjava, Bai, Ruixin, Wang, Guangying, Gupta, Chirag, Pasayat, Shubhra S
• Format: Journal Article
• Language: English
• Published: MDPI AG 01.09.2023
• Subjects: Liquors; Netherlands

In this article, a high-composition (>35%) thick-barrier (>30 nm) AlGaN/AlN/GaN high-electron-mobility transistor (HEMT) structure grown on a sapphire substrate with ultra-low sheet resistivity (<250 Ω/□) is reported. The optimization of growth conditions, such as reduced deposition rate, a...