Crack-Free High-Composition

In this article, a high-composition (>35%) thick-barrier (>30 nm) AlGaN/AlN/GaN high-electron-mobility transistor (HEMT) structure grown on a sapphire substrate with ultra-low sheet resistivity (<250 Ω/□) is reported. The optimization of growth conditions, such as reduced deposition rate, a...

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Bibliographic Details
Published inCrystals (Basel) Vol. 13; no. 10
Main Authors Mukhopadhyay, Swarnav, Liu, Cheng, Chen, Jiahao, Tahmidul Alam, Md, Sanyal, Surjava, Bai, Ruixin, Wang, Guangying, Gupta, Chirag, Pasayat, Shubhra S
Format Journal Article
LanguageEnglish
Published MDPI AG 01.09.2023
Subjects
Liquors
Netherlands
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Summary:In this article, a high-composition (>35%) thick-barrier (>30 nm) AlGaN/AlN/GaN high-electron-mobility transistor (HEMT) structure grown on a sapphire substrate with ultra-low sheet resistivity (<250 Ω/□) is reported. The optimization of growth conditions, such as reduced deposition rate, and the thickness optimization of different epitaxial layers allowed us to deposit a crack-free high-composition and thick AlGaN barrier layer HEMT structure. A significantly high two-dimensional electron gas (2DEG) density of 1.46 × 10[sup.13] cm[sup.−2] with a room-temperature mobility of 1710 cm[sup.2]/V·s was obtained via Hall measurement using the Van der Pauw method. These state-of-the-art results show great potential for high-power Ga-polar HEMT design on sapphire substrates.
ISSN:2073-4352
2073-4352
DOI:10.3390/cryst13101456