Efficient CsPbBr[sub.3] Quantum-Dot Light-Emitting Diodes Using Sputtered NiO Films as Hole Injection Layers
Perovskite quantum dots (QDs) have showed excellent optoelectronic properties to extend the application range of novel solid-state lighting, such as perovskite QD based LEDs (QD-LEDs). However, the traditional device structure of perovskite QD-LEDs employed PEDOT:PSS as a hole inject layer (HIL), wh...
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Published in | Materials Vol. 16; no. 17 |
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Main Authors | , , , , , , |
Format | Journal Article |
Language | English |
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MDPI AG
01.09.2023
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Abstract | Perovskite quantum dots (QDs) have showed excellent optoelectronic properties to extend the application range of novel solid-state lighting, such as perovskite QD based LEDs (QD-LEDs). However, the traditional device structure of perovskite QD-LEDs employed PEDOT:PSS as a hole inject layer (HIL), which impairs stability due to acidic surface characteristics. This study proposes the sputtered NiO films as an HIL to replace acidic PEDOT:PSS. The NiO films with significantly different characteristics were prepared by controlling the sputtering parameters to investigate the devices’ performance of NiO-based CsPbBr[sub.3] QD-LEDs. The optimized device showed an excellent performance with maxima luminescence of 20,118 cd/m[sup.2] and an external quantum efficiency (EQE) up to 3.63%. |
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AbstractList | Perovskite quantum dots (QDs) have showed excellent optoelectronic properties to extend the application range of novel solid-state lighting, such as perovskite QD based LEDs (QD-LEDs). However, the traditional device structure of perovskite QD-LEDs employed PEDOT:PSS as a hole inject layer (HIL), which impairs stability due to acidic surface characteristics. This study proposes the sputtered NiO films as an HIL to replace acidic PEDOT:PSS. The NiO films with significantly different characteristics were prepared by controlling the sputtering parameters to investigate the devices’ performance of NiO-based CsPbBr[sub.3] QD-LEDs. The optimized device showed an excellent performance with maxima luminescence of 20,118 cd/m[sup.2] and an external quantum efficiency (EQE) up to 3.63%. |
Audience | Academic |
Author | Tseng, Zong-Liang Liao, Ching-Yu Chen, Sih-An Xie, Jia-Xun Chen, Sheng-Hui Huang, Pao-Hsun Chao, Li-Wei |
Author_xml | – sequence: 1 fullname: Huang, Pao-Hsun – sequence: 2 fullname: Chen, Sih-An – sequence: 3 fullname: Chao, Li-Wei – sequence: 4 fullname: Xie, Jia-Xun – sequence: 5 fullname: Liao, Ching-Yu – sequence: 6 fullname: Tseng, Zong-Liang – sequence: 7 fullname: Chen, Sheng-Hui |
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Snippet | Perovskite quantum dots (QDs) have showed excellent optoelectronic properties to extend the application range of novel solid-state lighting, such as perovskite... |
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Title | Efficient CsPbBr[sub.3] Quantum-Dot Light-Emitting Diodes Using Sputtered NiO Films as Hole Injection Layers |
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