Efficient CsPbBr[sub.3] Quantum-Dot Light-Emitting Diodes Using Sputtered NiO Films as Hole Injection Layers

Perovskite quantum dots (QDs) have showed excellent optoelectronic properties to extend the application range of novel solid-state lighting, such as perovskite QD based LEDs (QD-LEDs). However, the traditional device structure of perovskite QD-LEDs employed PEDOT:PSS as a hole inject layer (HIL), wh...

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Published inMaterials Vol. 16; no. 17
Main Authors Huang, Pao-Hsun, Chen, Sih-An, Chao, Li-Wei, Xie, Jia-Xun, Liao, Ching-Yu, Tseng, Zong-Liang, Chen, Sheng-Hui
Format Journal Article
LanguageEnglish
Published MDPI AG 01.09.2023
Subjects
Light-emitting diodes
Japan
Taiwan
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Summary:Perovskite quantum dots (QDs) have showed excellent optoelectronic properties to extend the application range of novel solid-state lighting, such as perovskite QD based LEDs (QD-LEDs). However, the traditional device structure of perovskite QD-LEDs employed PEDOT:PSS as a hole inject layer (HIL), which impairs stability due to acidic surface characteristics. This study proposes the sputtered NiO films as an HIL to replace acidic PEDOT:PSS. The NiO films with significantly different characteristics were prepared by controlling the sputtering parameters to investigate the devices’ performance of NiO-based CsPbBr[sub.3] QD-LEDs. The optimized device showed an excellent performance with maxima luminescence of 20,118 cd/m[sup.2] and an external quantum efficiency (EQE) up to 3.63%.
ISSN:1996-1944
1996-1944
DOI:10.3390/ma16176060