Studies of Performance of Cs[sub.2]TiI[sub.6−X]Br[sub.X] -Based Mixed Halide Perovskite Solar Cell with CdS Electron Transport Layer

• Published in: Micromachines (Basel) Vol. 14; no. 2
• Main Authors: Chakraborty, Kunal, Medikondu, Nageswara Rao, Duraisamy, Kumutha, Soliman, Naglaa F, El-Shafai, Walid, Lavadiya, Sunil, Paul, Samrat, Das, Sudipta
• Format: Journal Article
• Language: English
• Published: MDPI AG 01.02.2023
• Subjects: Electron transport; Perovskite
• ISSN: 2072-666X; 2072-666X
• DOI: 10.3390/mi14020447

The present research work represents the numerical study of the device performance of a lead-free Cs[sub.2]TiI[sub.6−X]Br[sub.X]-based mixed halide perovskite solar cell (PSC), where x = 1 to 5. The open circuit voltage (V[sub.OC]) and short circuit current (J[sub.SC]) in a generic TCO/electron transport layer (ETL)/absorbing layer/hole transfer layer (HTL) structure are the key parameters for analyzing the device performance. The entire simulation was conducted by a SCAPS-1D (solar cell capacitance simulator- one dimensional) simulator. An alternative FTO/CdS/Cs[sub.2]TiI[sub.6−X]Br[sub.X]/CuSCN/Ag solar cell architecture has been used and resulted in an optimized absorbing layer thickness at 0.5 µm thickness for the Cs[sub.2]TiBr[sub.6], Cs[sub.2]TiI[sub.1]Br[sub.5], Cs[sub.2]TiI[sub.2]Br[sub.4], Cs[sub.2]TiI[sub.3]Br[sub.3] and Cs[sub.2]TiI[sub.4]Br[sub.2] absorbing materials and at 1.0 µm and 0.4 µm thickness for the Cs[sub.2]TiI[sub.5]Br[sub.1] and Cs[sub.2]TiI[sub.6] absorbing materials. The device temperature was optimized at 40 °C for the Cs[sub.2]TiBr[sub.6], Cs[sub.2]TiI[sub.1]Br[sub.5] and Cs[sub.2]TiI[sub.2]Br[sub.4] absorbing layers and at 20 °C for the Cs[sub.2]TiI[sub.3]Br[sub.3], Cs[sub.2]TiI[sub.4]Br[sub.2], Cs[sub.2]TiI[sub.5]Br[sub.1] and Cs[sub.2]TiI[sub.6] absorbing layers. The defect density was optimized at 10[sup.10] (cm[sup.−3]) for all the active layers.