Determining the Free Carrier Density in [Cd.sub.x][Hg.sub.1-x]Te Solid Solutions from Far-Infrared Reflection Spectra

A new contactless nondestructive technique for determining the free carrier density in single-crystal samples of [Cd.sub.x][Hg.sub.1-x]Te solid solutions and multilayer epitaxial heterostructures based on them from farinfrared reflection spectra is proposed. The characteristic point and correspondin...

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Published inSemiconductors (Woodbury, N.Y.) Vol. 51; no. 13; p. 1732
Main Authors Belov, A.G, Denisov, I.A, Kanevskii, V.E, Pashkova, N.V, Lysenko, A.P
Format Journal Article
LanguageEnglish
Published Springer 01.12.2017
Subjects
Electric properties
Electrical conductivity
Epitaxy
Solid solutions
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Summary:A new contactless nondestructive technique for determining the free carrier density in single-crystal samples of [Cd.sub.x][Hg.sub.1-x]Te solid solutions and multilayer epitaxial heterostructures based on them from farinfrared reflection spectra is proposed. The characteristic point and corresponding wavenumber in the roomtemperature spectral dependence of the reflectance are determined. The heavy hole density is established using calculated calibration curves. It is shown that in constructing the calibration curves, it is necessary to take into account the interaction of plasma oscillations with longitudinal optical phonons. Keywords: reflection spectra, [Cd.sub.x][Hg.sub.1-x]Te solid solutions, determination of the free carrier density, plasmonphonon interaction. DOI: 10.1134/S1063782617130048.sup.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782617130048.sup.