Low-Temperature Deposition of Si[N.sub.x] Films in Si[H.sub.4]/Ar + [N.sub.2] Inductively Coupled Plasma under High Silane Dilution with Argon

Si[N.sub.x] films on silicon are grown in Si[H.sub.4]/Ar + [N.sub.2] inductively coupled plasma under high silane dilution with argon. The dependences of the deposition rate and properties of silicon nitride on the plasmagas composition, pressure, radio-frequency power and inductive power are studie...

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Bibliographic Details
Published inSemiconductors (Woodbury, N.Y.) Vol. 51; no. 11; p. 1449
Main Authors Okhapkin, A.I, Korolyov, S.A, Yunin, P.A, Drozdov, M.N, Kraev, S.A, Khrykin, O.I, Shashkin, V.I
Format Journal Article
LanguageEnglish
Published Springer 01.11.2017
Subjects
Chemical vapor deposition
Dissociation reactions
Nitrides
Silanes
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Summary:Si[N.sub.x] films on silicon are grown in Si[H.sub.4]/Ar + [N.sub.2] inductively coupled plasma under high silane dilution with argon. The dependences of the deposition rate and properties of silicon nitride on the plasmagas composition, pressure, radio-frequency power and inductive power are studied. In some cases, the found dependences differ from published data for undiluted reagents. It is found that the lowest impurity content in films and their best properties are implemented at a nitrogen-to-silane ratio close to 1.4. An increase in the radio-frequency power results in smoother samples due to the polishing effect of argon ions.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782617110215