Effect of ionic [Ag.sup.+] transfer on localization of metal-assisted etching of silicon surface

The specific features of fabrication of 3D silicon structures via local formation of a sacrificial porous silicon layer by metal-assisted chemical etching with 50- and 100-nm-thick silver films as a catalyst are studied. It is found that the mass transfer of [Ag.sup.+] ions, caused by the temperatur...

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Published inSemiconductors (Woodbury, N.Y.) Vol. 50; no. 13; p. 1720
Main Authors Pyatilova, O.V, Sysa, A.V, Gavrilov, S.A, Yakimova, L.V, Pavlov, A.A, Belov, A.N, Raskin, A.A
Format Journal Article
LanguageEnglish
Published Springer 15.12.2016
Subjects
Silicon
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Summary:The specific features of fabrication of 3D silicon structures via local formation of a sacrificial porous silicon layer by metal-assisted chemical etching with 50- and 100-nm-thick silver films as a catalyst are studied. It is found that the mass transfer of [Ag.sup.+] ions, caused by the temperature gradient, affects the surface morphology of the structure being formed, depending on the linear size of the mask-catalyst. Keywords: nanostructured silicon, chemical etching, silver film, catalyst, ionic mass transfer.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782616130078