Capacitance--voltage characteristics of /[Al.sub.2] [O.sub.3]/n-GaN MIS structures

The capacitance-voltage characteristics of (Al/Ti)/[Al.sub.2][O.sub.3]/n-GaN metal--insulator--semiconductor (MIS) structures are measured and analyzed. n-Type GaN films are grown on sapphire (0001) substrates by the metal-organic chemical vapor deposition method. An aluminum-oxide layer with a thic...

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Published inSemiconductors (Woodbury, N.Y.) p. 1035
Main Authors Ivanov, P.A, Potapov, A.S, Nikolaev, A.E, Lundin, V.V, Sakharov, A.V, Tsatsulnikov, A.F, Afanas'ev, A.V, Romanov, A.A, Osachev, E.V
Format Journal Article
LanguageEnglish
Published Springer 01.08.2015
Subjects
Analysis
Chemical vapor deposition
Electric properties
Liquors
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Summary:The capacitance-voltage characteristics of (Al/Ti)/[Al.sub.2][O.sub.3]/n-GaN metal--insulator--semiconductor (MIS) structures are measured and analyzed. n-Type GaN films are grown on sapphire (0001) substrates by the metal-organic chemical vapor deposition method. An aluminum-oxide layer with a thickness of 60 nm is deposited onto the surface of GaN by the method of atomic-layer deposition from the gas phase. Metallic contacts are deposited by the electron-beam evaporation of titanium and aluminum in vacuum. According to the measurement results, the breakdown-field strength of the oxide, its dielectric constant, and the integrated electron density of states at the oxide--semiconductor interface are 5 x [10.sup.6] V/cm, 7.5, and 3 x [10.sup.12] [cm.sup.-2], respectively. DOI: 10.1134/S106378261508009
ISSN:1063-7826
1090-6479
DOI:10.1134/S106378261508009