Behavior of the Fe impurity in [Hg.sub.3][In.sub.2] [Te.sub.6] crystals

Optical and photoelectric measurements reveal that doping with iron leads to the formation of a deep level at [E.sub.c]--0.69 eV in [Hg.sub.3][In.sub.2][Te.sub.6] crystals. When light is absorbed by [Fe.sup.2+] impurity centers, both electronic transitions of the impurity-level-conduction-band type...

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Published inSemiconductors (Woodbury, N.Y.) p. 892
Main Authors Grushka, O.G, Savchuk, A.I, Chupyra, S.N, Bilichuk, S.V
Format Journal Article
LanguageEnglish
Published Springer 01.07.2015
Subjects
Semiconductors
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Summary:Optical and photoelectric measurements reveal that doping with iron leads to the formation of a deep level at [E.sub.c]--0.69 eV in [Hg.sub.3][In.sub.2][Te.sub.6] crystals. When light is absorbed by [Fe.sup.2+] impurity centers, both electronic transitions of the impurity-level-conduction-band type and optical transitions between ground and excited states of the aforementioned centers (intracenter transitions) are observed. Investigations of transport phenomena point to the acceptor properties of [Fe.sup.2+] centers. DOI: 10.1134/S106378261507009X
ISSN:1063-7826
DOI:10.1134/S106378261507009X