Comparative analysis of breakdown mechanism in thin Si[O.sub.2] oxide films in metal--oxide--semiconductor structures under the action of heavy charged particles and a pulsed voltage
Regularities in the breakdown of thin Si[O.sub.2] oxide films in metal-oxide-semiconductors structures of power field-effect transistors under the action of single heavy charged particles and a pulsed voltage are studied experimentally. Using a phenomenological approach, we carry out comparative ana...
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Published in | Technical physics p. 187 |
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Main Authors | , , , |
Format | Journal Article |
Language | English |
Published |
Springer
01.02.2016
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Subjects | |
Online Access | Get full text |
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Summary: | Regularities in the breakdown of thin Si[O.sub.2] oxide films in metal-oxide-semiconductors structures of power field-effect transistors under the action of single heavy charged particles and a pulsed voltage are studied experimentally. Using a phenomenological approach, we carry out comparative analysis of physical mechanisms and energy criteria of the Si[O.sub.2] breakdown in extreme conditions of excitation of the electron subsystem in the subpicosecond time range. DOI: 10.1134/S1063784216020286 |
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ISSN: | 1063-7842 1090-6525 |
DOI: | 10.1134/S1063784216020286 |