Comparative analysis of breakdown mechanism in thin Si[O.sub.2] oxide films in metal--oxide--semiconductor structures under the action of heavy charged particles and a pulsed voltage

Regularities in the breakdown of thin Si[O.sub.2] oxide films in metal-oxide-semiconductors structures of power field-effect transistors under the action of single heavy charged particles and a pulsed voltage are studied experimentally. Using a phenomenological approach, we carry out comparative ana...

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Bibliographic Details
Published inTechnical physics p. 187
Main Authors Zinchenko, V.F, Lavrentev, K.V, Emelyanov, V.V, Vatuev, A.S
Format Journal Article
LanguageEnglish
Published Springer 01.02.2016
Subjects
Comparative analysis
Field-effect transistors
Semiconductors
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Summary:Regularities in the breakdown of thin Si[O.sub.2] oxide films in metal-oxide-semiconductors structures of power field-effect transistors under the action of single heavy charged particles and a pulsed voltage are studied experimentally. Using a phenomenological approach, we carry out comparative analysis of physical mechanisms and energy criteria of the Si[O.sub.2] breakdown in extreme conditions of excitation of the electron subsystem in the subpicosecond time range. DOI: 10.1134/S1063784216020286
ISSN:1063-7842
1090-6525
DOI:10.1134/S1063784216020286