On the detection of [U.sup.-] centers in g-[As.sub.2][Se.sub.3] films by thermal cycling measurements of electrical conductivity

Pinning of the Fermi level near the midgap is one of the basic properties of chalcogenide glassy semiconductors. It is assumed in most models that the pinning is due to the presence of charged defects ([U.sup.-] centers) that strongly polarize the lattice and have energy levels close to the Fermi le...

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Published inSemiconductors (Woodbury, N.Y.) Vol. 48; no. 8; p. 1063
Main Authors Egarmin, K.N, Eganova, E.M, Voronkov, E.N
Format Journal Article
LanguageEnglish
Published Springer 01.08.2014
Subjects
Analysis
Electric properties
Electrical conductivity
Hostages
Semiconductors
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Summary:Pinning of the Fermi level near the midgap is one of the basic properties of chalcogenide glassy semiconductors. It is assumed in most models that the pinning is due to the presence of charged defects ([U.sup.-] centers) that strongly polarize the lattice and have energy levels close to the Fermi level. [U.sup.-] centers are detected in this study by the thermal cycling method, which made it possible to markedly extend the time during which the charge released by these centers is recorded. The results of measurements of the electrical conductivity of [As.sub.2][Se.sub.3] films in successive cycles of sample cooling and heating are presented. This cycling leads to the appearance and evolution of two discrete peaks. A conclusion is made that at least one of these peaks is associated with negatively charged [U.sup.-] centers with levels near the Fermi level. DOI: 10.1134/S1063782614080107
ISSN:1063-7826
DOI:10.1134/S1063782614080107