Special features of admittance in MIS structures based on graded-gap MBE n-[Hg.sub.1-x][Cd.sub.x]Te in a temperature range of 8-300 K

Admittance of MIS structures based on graded-gap n-[Hg.sub.1-x][Cd.sub.x]Te (x = 0.31-0.32) grown by molecular beam epitaxy (MBE) is investigated in a wide temperature range (8-300 K). It is shown that the temperature and frequency dependences of the differential resistance of space charge region fo...

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Bibliographic Details
Published inRussian physics journal Vol. 57; no. 5; p. 633
Main Authors Voitsekhovskii, A.V, Nesmelov, S.N, Dzyadukh, S.M, Vasil'ev, V.V, Varavin, V.S, Dvoretskii, S.A, Mikhailov, N.N, Kuz'min, V.D, Remesnik, V.G
Format Journal Article
LanguageEnglish
Published Springer 01.09.2014
Subjects
Epitaxy
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Summary:Admittance of MIS structures based on graded-gap n-[Hg.sub.1-x][Cd.sub.x]Te (x = 0.31-0.32) grown by molecular beam epitaxy (MBE) is investigated in a wide temperature range (8-300 K). It is shown that the temperature and frequency dependences of the differential resistance of space charge region for structures with a graded-gap layer are qualitatively similar to those for structures without a graded-gap layer. It is found that for MIS structures based on MBE n-[Hg.sub.1-x][Cd.sub.x]Te (x = 0.31-0.32), regardless of the presence of a graded-gap layer, the differential resistance of space charge region is limited by the processes of Shockley-Read generation in the temperature range of 25-100 K. Keywords: MIS structure, HgCdTe, molecular beam epitaxy, a graded-gap layer, admittance, space charge region.
ISSN:1064-8887