High-power pulse-emitting lasers in the 1.5-1.6 µm spectral region

The metalorganic chemical vapor deposition (MOCVD) method is used for growing heterostructures in the system of AlGaInAs/InP materials with different versions of the configuration of the active region. Laser diodes are fabricated from the grown heterostructures; with the purpose of increasing the ou...

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Bibliographic Details
Published inSemiconductors (Woodbury, N.Y.) Vol. 48; no. 1; p. 95
Main Authors Gorlachuk, P.V, Ryaboshtan, Yu.L, Marmalyuk, A.A, Kurnosov, V.D, Kurnosov, K.V, Zhuravleva, O.V, Romantsevich, V.I, Chernov, R.V, Ivanov, A.V, Simakov, V.A
Format Journal Article
LanguageEnglish
Published Springer 01.01.2014
Subjects
Chemical vapor deposition
Lasers
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Summary:The metalorganic chemical vapor deposition (MOCVD) method is used for growing heterostructures in the system of AlGaInAs/InP materials with different versions of the configuration of the active region. Laser diodes are fabricated from the grown heterostructures; with the purpose of increasing the output optical power, the laser diodes are integrated into bars and arrays. Single laser diodes exhibit a high output power of -6 W in the pulse mode. The laser bars exhibit an output power of 20 W in the pulse mode. The highest achieved pulse output optical power for an array of 30 elements amounts to ~110 W. DOI: 10.1134/S106378261401014X
ISSN:1063-7826
1090-6479
DOI:10.1134/S106378261401014X