[O.sub.3] films formed by electrochemical oxidation

The effect of oxygen plasma on gallium oxide films formed by electrochemical oxidation of n-GaAs wafers with a donor concentration [N.sub.d] = (1-2) x [10.sup.16] [cm.sup.-3] has been investigated. It is shown that the treatment in an oxygen plasma at a temperature of 50-90°C increases the concentra...

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Bibliographic Details
Published inSemiconductors (Woodbury, N.Y.) Vol. 45; no. 8; p. 1097
Main Authors Kalygina, V.M, Zarubin, A.N, Nayden, Ye.P, Novikov, V.A, Petrova, Y.S, Tolbanov, O.P, Tyazhev, A.V, Yaskevich, T.M
Format Journal Article
LanguageEnglish
Published Springer 01.08.2011
Subjects
Chemical properties
Dielectrics
Electric properties
Electrical conductivity
Gallium arsenide
Oxidation-reduction reaction
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Summary:The effect of oxygen plasma on gallium oxide films formed by electrochemical oxidation of n-GaAs wafers with a donor concentration [N.sub.d] = (1-2) x [10.sup.16] [cm.sup.-3] has been investigated. It is shown that the treatment in an oxygen plasma at a temperature of 50-90°C increases the concentraation of β-phase crystallites which causes an increase in the permittivity, a decrease in the dielectric dissipation factor, and a change in the conductivity of GaAs-(gallium oxide)-metal structures. DOI: 10.1134/S1063782611080112
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782611080112