Surface morphology and electrical properties of Au/Ni/C/n-[Ga.sub.2][O.sub.3]/p-GaSeKN[O.sub.3] hybrid structures fabricated on the basis of a layered semiconductor with nanoscale ferroelectric inclusions

• Published in: Semiconductors (Woodbury, N.Y.) Vol. 46; no. 3; p. 342
• Main Authors: Bakhtinov, A.P, Vodopyanov, V.N, Netyaga, V.V, Kudrynskyi, Z.R, Lytvyn, O.S
• Format: Journal Article
• Language: English
• Published: Springer 01.03.2012
• Subjects: Analysis; Electric properties; Ferromagnetism; Nanotechnology
• ISSN: 1063-7826
• DOI: 10.1134/S1063782612030050

Features of the formation of Au/Ni//n-[Ga.sub.2][O.sub.3] hybrid nanostructures on a Van der Waals surface (0001) of "layered semiconductor--ferroelectric" composite nanostructures (p-GaSe<KN[O.sub.3]>) are studied using atomic-force microscopy. The room-temperature current--voltage characteristics and the dependence of the impedance spectrum of hybrid structures on a bias voltage are studied. The current--voltage characteristic includes a resonance peak and a portion with negative differential resistance. The current attains a maximum at a certain bias voltage, when electric polarization switching in nanoscale three-dimensional inclusions in the layered GaSe matrix occurs. In the high-frequency region (f> [10.sup.6] Hz), inductive-type impedance (a large negative capacitance of structures, ~[10.sup.6] F/[mm.sup.2]) is detected. This effect is due to spin-polarized electron transport in a series of interconnected semiconductor composite nanostructures with multiple p-GaSe<KN[O.sub.3]> quantum wells and a forward-biased "ferromagnetic metal--semiconductor" polarizer (Au/Ni//[n.sup.+]-[Ga.sub.2][O.sub.3]/n-[Ga.sub.2][O.sub.3]). A shift of the maximum (current hysteresis) is detected in the current-voltage characteristics for various directions of the variations in bias voltage. DOI: 10.1134/S1063782612030050