The structure and magnetic properties of co films on Si substrates
Epitaxial Co films have been grown on single-crystal Si(111) and Si(001) substrates. The structure and the lattice parameter of Co films have been determined using the method of reflection high-energy electron diffraction. The domain structure of the epitaxial Co films has been studied, and the pres...
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Published in | Physics of metals and metallography Vol. 109; no. 6; p. 604 |
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Main Authors | , , , , , |
Format | Journal Article |
Language | English |
Published |
Springer
01.06.2010
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Subjects | |
Online Access | Get full text |
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Summary: | Epitaxial Co films have been grown on single-crystal Si(111) and Si(001) substrates. The structure and the lattice parameter of Co films have been determined using the method of reflection high-energy electron diffraction. The domain structure of the epitaxial Co films has been studied, and the presence of a magnetocrystalline anisotropy and an anisotropy induced by substrate steps have been established. It has been shown that the coercive force of epitaxial Co films is determined by the roughness of the surface and by misfit dislocations. Key words: epitaxial films, domain structure, coercive force, magnetic anisotropy, reflection high-energy electron diffraction DOI: 10.1134/S0031918X10060050 |
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ISSN: | 0031-918X 1555-6190 |
DOI: | 10.1134/S0031918X10060050 |