The structure and magnetic properties of co films on Si substrates

Epitaxial Co films have been grown on single-crystal Si(111) and Si(001) substrates. The structure and the lattice parameter of Co films have been determined using the method of reflection high-energy electron diffraction. The domain structure of the epitaxial Co films has been studied, and the pres...

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Published inPhysics of metals and metallography Vol. 109; no. 6; p. 604
Main Authors Chebotkevich, L.A, Ermakov, K.S, Balashev, V.V, Davydenko, A.V, Ivanovo, Yu.P, Ognev, A.V
Format Journal Article
LanguageEnglish
Published Springer 01.06.2010
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Summary:Epitaxial Co films have been grown on single-crystal Si(111) and Si(001) substrates. The structure and the lattice parameter of Co films have been determined using the method of reflection high-energy electron diffraction. The domain structure of the epitaxial Co films has been studied, and the presence of a magnetocrystalline anisotropy and an anisotropy induced by substrate steps have been established. It has been shown that the coercive force of epitaxial Co films is determined by the roughness of the surface and by misfit dislocations. Key words: epitaxial films, domain structure, coercive force, magnetic anisotropy, reflection high-energy electron diffraction DOI: 10.1134/S0031918X10060050
ISSN:0031-918X
1555-6190
DOI:10.1134/S0031918X10060050