Memristive Properties of Structures Based on

• Published in: Journal of communications technology & electronics Vol. 63; no. 5; pp. 491 - 496
• Main Authors: Levanov, V.A, Emel'yanov, A.V, Demin, V.A, Nikirui, K.E, Sitnikov, A.V, Nikolaev, S.N, Vedeneev, A.S, Kalinin, Yu.E, Ryl'kov, V.V
• Format: Journal Article
• Language: English
• Published: Springer 01.05.2018
• ISSN: 1064-2269; 1555-6557
• DOI: 10.1134/S1064226918050078

The current-voltage characteristics of the metal/nanocomposite (NC)/metal structures based on [([Co.sub.41][Fe.sub.39][B.sub.20]).sub.x][(LiNb[O.sub.3]).sub.100-x] NCs 2.4 and 3 [micro]m thick are investigated in the fields of up to ~[10.sup.4] V/cm. The structures are synthesized via ion-beam sputtering of a composite target, in which NCs of different composition are formed in the single cycle at x = 5-48 at %. The memristive effect (ME) manifesting itself during resistive switching of structures and the storage of incipient states has been detected at x [approximately equal to] 10 at %. It is ascertained that the ME depends weakly on used metal (Cu or Cr) contacts and the NC layer thickness, the number of switching cycles (without degradation) exceeds [10.sup.5], and the ratio between the resistances of high- and low-resistance states, i.e., the [R.sub.off]/[R.sub.on] ratio, reaches approximately 65. The detected ME is explained by the fact that oxygen vacancies substantially affect the tunneling conductance of metal-granule chains determining the electric resistance of structures below the percolation threshold.