ABRASIVE COMPOSITION FOR POLISHING SEMICONDUCTOR DEVICE AND PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE WITH THE SAME

• Main Authors: KIDO, TAKANORI, ICHIKAWA, KAGETAKA
• Format: Patent
• Language: English; French; Japanese
• Published: 02.09.1999
• Edition: 6
• Subjects: ADHESIVES; BASIC ELECTRIC ELEMENTS; CHEMISTRY; DYES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE; METALLURGY; MISCELLANEOUS APPLICATIONS OF MATERIALS; MISCELLANEOUS COMPOSITIONS; NATURAL RESINS; PAINTS; POLISHES; SEMICONDUCTOR DEVICES

An abrasive composition for semiconductor device polishing which comprises cerium oxide, a water-soluble organic compound having at least one of -COOH, -COOMX (wherein MX is an atom or functional group which each, as a substitute for hydrogen, is capable of forming a salt), -SO3H, and -SO3MY (wherein MY is an atom or functional group which each, as a substitute for hydrogen, is capable of forming a salt), and water; and a method of shallow trench isolation in which the abrasive composition is used. L'invention concerne une composition abrasive de polissage d'un dispositif semiconducteur, la composition comprenant un oxyde de cérium, un composé organique soluble dans l'eau possédant au moins -COOH, -COOMX (dans lequel MX est un atome ou un groupe fonctionnel, chacun, comme substitut d'hydrogène, étant capable de former un sel), -SO3H et -SO3MY (dans lequel MY est un atome ou un groupe fonctionnel, chacun, comme substitut d'hydrogène, étant capable de former un sel), et de l'eau. L'invention concerne également un procédé d'isolation de tranchée de faible profondeur dans lequel la composition abrasive est utilisée.