PLASMA ETCHING METHOD

Etching gas is introduced into a treatment chamber (16) and a plasma is generated to etch a silicon nitride film (12) which is formed on the field silicon oxide film (4) of a wafer (W). Mixed gas which contains at least CH2F2 gas and O2 gas is used as the etching gas. The treatment pressure and the...

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Main Authors YATSUDA, KOICHI, OKAMOTO, SHIN, INAZAWA, KOUICHIRO, NISHIARA, TETSUYA
Format Patent
LanguageEnglish
French
Japanese
Published 23.04.1998
Edition6
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Etching gas is introduced into a treatment chamber (16) and a plasma is generated to etch a silicon nitride film (12) which is formed on the field silicon oxide film (4) of a wafer (W). Mixed gas which contains at least CH2F2 gas and O2 gas is used as the etching gas. The treatment pressure and the mixing ratio (CH2F2/O2) are used as parameters for setting a plasma etching apparatus in accordance with the set value of the uniformity in an etched surface. The more strict the set value of the uniformity in the etched surfaces, the higher one of the treatment pressure and the mixing ratios. On introduit du gaz décapant dans une chambre de traitement (16) tandis qu'on produit un plasma servant à décaper la couche de nitrure de silicium (12) formée sur la couche d'oxyde du champs de silicium (4) de la puce (W). Le gaz de décapage est un mélange contenant au moins du CH2F2 et de l'O2. La pression de traitement et le rapport CH2F2/O2 constituent les paramètres de réglage de l'appareil en accord avec le taux d'uniformité de la surface décapée fixé. Plus ce taux est strict et plus la pression de traitement et le rapport CH2F2/O2 doivent être élevés.
Bibliography:Application Number: WO1997JP03634