METHOD AND APPARATUS FOR FILM FORMATION

• Main Authors: KUBO, YUJI, TOKUMARU, SHINJI
• Format: Patent
• Language: English; French; Japanese
• Published: 09.01.1997
• Edition: 6
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

A thin film is formed by sputtering on a substrate having holes while gas ions are emitted to the substrate at an angle alpha (0 DEG < alpha </= tan<-1> (1/aspect ratio) + 10 DEG ), depending on the aspect ratio of the hole, with respect to the perpendicular of the substrate at 30 to 500 eV. In this way, the gas ions are caused to impinge against the sputtered particles adhering to the side wall portion of the hole during the formation of the thin film so that the particles on the side wall may be sputtered again. Cette invention concerne la formation d'un film fin par pulvérisation ionique d'un substrat comportant des trous. Des ions de gaz sont émis en direction du substrat selon un angle alpha (0 DEG < alpha </= tan<-1> (1/rapport d'aspect ) + 10 DEG ), en fonction du rapport d'aspect des trous, par rapport à la perpendiculaire du substrat et dans une plage de 30 à 500 eV. Les ions de gaz entrent ainsi en collision avec les particules pulvérisées adhérant à une partie de la paroi latérale du trou lors de la formation du film fin, de sorte que les particules sur la paroi latérale puissent être pulvérisées à nouveau.