PROCESS FOR AT LEAST PARTIALLY CONVERTING SEMI-CONDUCTOR FILMS OF THE I-III-VI2-TYPE

A compound semiconductor film of the I-III-VI2 type is exposed to a substance containing at least one additional element chosen from the chemical groups I, III and VI and is heated to a preselected temperature in the presence of the substance to exchange the additional element for at least a portion...

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Main Authors ERMER, JAMES, H, TARRANT, DALE, E
Format Patent
LanguageEnglish
French
Published 24.11.1994
Edition5
Subjects
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Abstract A compound semiconductor film of the I-III-VI2 type is exposed to a substance containing at least one additional element chosen from the chemical groups I, III and VI and is heated to a preselected temperature in the presence of the substance to exchange the additional element for at least a portion of one or more of the original constituent elements of the film. The result is a second compound semiconductor of the same type but having a different composition. Une couche mince semi-conductrice composite du type I-III-VI2 est exposée à une substance contenant au moins un élément supplémentaire choisi dans les groupes chimiques I, III et VI, après quoi elle est chauffée à une température présélectionnée en présence de la substance afin que l'élément supplémentaire remplace au moins une partie d'un ou de plusieurs des éléments constitutifs originaux de la couche mince. L'on obtient ainsi un second semi-conducteur composite du même type, mais d'une composition différente.
AbstractList A compound semiconductor film of the I-III-VI2 type is exposed to a substance containing at least one additional element chosen from the chemical groups I, III and VI and is heated to a preselected temperature in the presence of the substance to exchange the additional element for at least a portion of one or more of the original constituent elements of the film. The result is a second compound semiconductor of the same type but having a different composition. Une couche mince semi-conductrice composite du type I-III-VI2 est exposée à une substance contenant au moins un élément supplémentaire choisi dans les groupes chimiques I, III et VI, après quoi elle est chauffée à une température présélectionnée en présence de la substance afin que l'élément supplémentaire remplace au moins une partie d'un ou de plusieurs des éléments constitutifs originaux de la couche mince. L'on obtient ainsi un second semi-conducteur composite du même type, mais d'une composition différente.
Author ERMER, JAMES, H
TARRANT, DALE, E
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DocumentTitleAlternate PROCEDE DE CONVERSION AU MOINS PARTIELLE DE COUCHES MINCES SEMI-CONDUCTRICES DU TYPE I-III-VI2
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Snippet A compound semiconductor film of the I-III-VI2 type is exposed to a substance containing at least one additional element chosen from the chemical groups I, III...
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SubjectTerms AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE
APPARATUS THEREFOR
BASIC ELECTRIC ELEMENTS
CHEMISTRY
CRYSTAL GROWTH
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC
GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS
METALLURGY
PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGYGENERATION, TRANSMISSION OR DISTRIBUTION
REFINING BY ZONE-MELTING OF MATERIAL
SEMICONDUCTOR DEVICES
SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
SINGLE-CRYSTAL-GROWTH
TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINSTCLIMATE CHANGE
UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
Title PROCESS FOR AT LEAST PARTIALLY CONVERTING SEMI-CONDUCTOR FILMS OF THE I-III-VI2-TYPE
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