PROCESS FOR AT LEAST PARTIALLY CONVERTING SEMI-CONDUCTOR FILMS OF THE I-III-VI2-TYPE
A compound semiconductor film of the I-III-VI2 type is exposed to a substance containing at least one additional element chosen from the chemical groups I, III and VI and is heated to a preselected temperature in the presence of the substance to exchange the additional element for at least a portion...
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Main Authors | , |
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Format | Patent |
Language | English French |
Published |
24.11.1994
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Edition | 5 |
Subjects | |
Online Access | Get full text |
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Abstract | A compound semiconductor film of the I-III-VI2 type is exposed to a substance containing at least one additional element chosen from the chemical groups I, III and VI and is heated to a preselected temperature in the presence of the substance to exchange the additional element for at least a portion of one or more of the original constituent elements of the film. The result is a second compound semiconductor of the same type but having a different composition.
Une couche mince semi-conductrice composite du type I-III-VI2 est exposée à une substance contenant au moins un élément supplémentaire choisi dans les groupes chimiques I, III et VI, après quoi elle est chauffée à une température présélectionnée en présence de la substance afin que l'élément supplémentaire remplace au moins une partie d'un ou de plusieurs des éléments constitutifs originaux de la couche mince. L'on obtient ainsi un second semi-conducteur composite du même type, mais d'une composition différente. |
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AbstractList | A compound semiconductor film of the I-III-VI2 type is exposed to a substance containing at least one additional element chosen from the chemical groups I, III and VI and is heated to a preselected temperature in the presence of the substance to exchange the additional element for at least a portion of one or more of the original constituent elements of the film. The result is a second compound semiconductor of the same type but having a different composition.
Une couche mince semi-conductrice composite du type I-III-VI2 est exposée à une substance contenant au moins un élément supplémentaire choisi dans les groupes chimiques I, III et VI, après quoi elle est chauffée à une température présélectionnée en présence de la substance afin que l'élément supplémentaire remplace au moins une partie d'un ou de plusieurs des éléments constitutifs originaux de la couche mince. L'on obtient ainsi un second semi-conducteur composite du même type, mais d'une composition différente. |
Author | ERMER, JAMES, H TARRANT, DALE, E |
Author_xml | – fullname: ERMER, JAMES, H – fullname: TARRANT, DALE, E |
BookMark | eNqNyk0KwjAQQOEsdOHfHeYCWdgK1mWIEzuQNiEZK12VInElbaHeH7vwAK4eH7ytWA3jkDaCfXAaYwTjAigGiyoyeBWYlLUtaFc3uKC-QcSK5OLrXfMyG7JVBGeASwSSRCQbyiS3Hvdi_erfczr8uhNgkHUp0zR2aZ76ZxrSp3u4yyk751mhjvkfyxcBJTGJ |
ContentType | Patent |
DBID | EVB |
DatabaseName | esp@cenet |
DatabaseTitleList | |
Database_xml | – sequence: 1 dbid: EVB name: esp@cenet url: http://worldwide.espacenet.com/singleLineSearch?locale=en_EP sourceTypes: Open Access Repository |
DeliveryMethod | fulltext_linktorsrc |
Discipline | Medicine Chemistry Sciences |
DocumentTitleAlternate | PROCEDE DE CONVERSION AU MOINS PARTIELLE DE COUCHES MINCES SEMI-CONDUCTRICES DU TYPE I-III-VI2 |
Edition | 5 |
ExternalDocumentID | WO9427328A1 |
GroupedDBID | EVB |
ID | FETCH-epo_espacenet_WO9427328A13 |
IEDL.DBID | EVB |
IngestDate | Fri Jul 19 17:12:20 EDT 2024 |
IsOpenAccess | true |
IsPeerReviewed | false |
IsScholarly | false |
Language | English French |
LinkModel | DirectLink |
MergedId | FETCHMERGED-epo_espacenet_WO9427328A13 |
Notes | Application Number: WO1994US04245 |
OpenAccessLink | https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19941124&DB=EPODOC&CC=WO&NR=9427328A1 |
ParticipantIDs | epo_espacenet_WO9427328A1 |
PublicationCentury | 1900 |
PublicationDate | 19941124 |
PublicationDateYYYYMMDD | 1994-11-24 |
PublicationDate_xml | – month: 11 year: 1994 text: 19941124 day: 24 |
PublicationDecade | 1990 |
PublicationYear | 1994 |
RelatedCompanies | SIEMENS SOLAR INDUSTRIES INTERNATIONAL, INC |
RelatedCompanies_xml | – name: SIEMENS SOLAR INDUSTRIES INTERNATIONAL, INC |
Score | 2.4352815 |
Snippet | A compound semiconductor film of the I-III-VI2 type is exposed to a substance containing at least one additional element chosen from the chemical groups I, III... |
SourceID | epo |
SourceType | Open Access Repository |
SubjectTerms | AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY CRYSTAL GROWTH ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGYGENERATION, TRANSMISSION OR DISTRIBUTION REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINSTCLIMATE CHANGE UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL |
Title | PROCESS FOR AT LEAST PARTIALLY CONVERTING SEMI-CONDUCTOR FILMS OF THE I-III-VI2-TYPE |
URI | https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19941124&DB=EPODOC&locale=&CC=WO&NR=9427328A1 |
hasFullText | 1 |
inHoldings | 1 |
isFullTextHit | |
isPrint | |
link | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV3dT8IwEG8IGvVNUSN-pQ9mb40wuskeiBldJzVjW6AgPJGtGwkvg8iM_77XBdQXfetXLu2l17tre79D6CG3dVpCvXlBvxCa2hlxWssWSRPaVV1LOR2q452HoT2Y0NeZNauh1T4WpsIJ_azAEUGiFMh7WZ3Xm59LLK_6W7l9TFfQtH72Zc8zsl24GAXzgRpev8fjyIuYwRj4bUY46jnU1LA0LjhKB9qK1jD7fNrXQSmb3xrFP0WHMRAryjNUy4sGOmb7xGsNdDTcvXdDcSd623Mk41HEgFsY3DbsShxwdyxxDPaocINgjlkUTjlUwhc8Bt4SqHsTJmGwL4LhGEc-lgOOBRFCkKkwiZzH_AJhn0s2IDC9xTcrFm_R90I6l6herIv8CuFkSRNTZRksK6NWR3UTUMu0laqn3FaO5TRR808y1__03aCTCjq43SYmvUX18v0jvwMdXKb3Ffe-AGO2hCw |
link.rule.ids | 230,309,786,891,25594,76906 |
linkProvider | European Patent Office |
linkToHtml | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV3dT8IwEG-IGvFNUSN-9sHsrRFGN9gDMaPbXHVfgYLwRPZFwssgMuO_73UB9EXfem1zaS-93l3b-xWhx1yX3xLKxQv2hdBEz4jRWrRIEtNe2tNSo0NlvrMf6O6Yvk61aQ0td7kwFU7oVwWOCBqVgr6X1X69_jnEsqq3lZunZAlVq2dH9C0l26aLUXAfqGIN-nYUWiFTGIO4TQmGfYOqEpbGhEDpsCvBeaXnNBnIpJT1b4vinKKjCJgV5Rmq5UUD1dnu47UGOva3991Q3Kre5hyJaBgykBaGsA2bAnu2ORI4An-Um543wywMJjYQwQsegWwJ0NaYCejscM8f4dDBwrUxJ5xzMuEqEbPIvkDYsQVzCQxvvhfF_D3cT6RziQ6KVZFfIRwvaKymWaYZNKNaJ-3FYJZpK0m7uZ4amtFEzT_ZXP_T9oDqrvC9uceDtxt0UsEIt9tEpbfooPz4zO_AHpfJfSXJb7o7hxk |
openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Apatent&rft.title=PROCESS+FOR+AT+LEAST+PARTIALLY+CONVERTING+SEMI-CONDUCTOR+FILMS+OF+THE+I-III-VI2-TYPE&rft.inventor=ERMER%2C+JAMES%2C+H&rft.inventor=TARRANT%2C+DALE%2C+E&rft.date=1994-11-24&rft.externalDBID=A1&rft.externalDocID=WO9427328A1 |