PROCESS FOR AT LEAST PARTIALLY CONVERTING SEMI-CONDUCTOR FILMS OF THE I-III-VI2-TYPE
A compound semiconductor film of the I-III-VI2 type is exposed to a substance containing at least one additional element chosen from the chemical groups I, III and VI and is heated to a preselected temperature in the presence of the substance to exchange the additional element for at least a portion...
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Main Authors | , |
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Format | Patent |
Language | English French |
Published |
24.11.1994
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Edition | 5 |
Subjects | |
Online Access | Get full text |
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Summary: | A compound semiconductor film of the I-III-VI2 type is exposed to a substance containing at least one additional element chosen from the chemical groups I, III and VI and is heated to a preselected temperature in the presence of the substance to exchange the additional element for at least a portion of one or more of the original constituent elements of the film. The result is a second compound semiconductor of the same type but having a different composition.
Une couche mince semi-conductrice composite du type I-III-VI2 est exposée à une substance contenant au moins un élément supplémentaire choisi dans les groupes chimiques I, III et VI, après quoi elle est chauffée à une température présélectionnée en présence de la substance afin que l'élément supplémentaire remplace au moins une partie d'un ou de plusieurs des éléments constitutifs originaux de la couche mince. L'on obtient ainsi un second semi-conducteur composite du même type, mais d'une composition différente. |
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Bibliography: | Application Number: WO1994US04245 |