THIN FILM TRANSISTOR AND DISPLAY USING THE TRANSISTOR

• Main Authors: SEIKI, MASAHIRO, SUGAHARA, ATSUSHI, SHIBUSAWA, MAKOTO, MIURA, YASUNORI
• Format: Patent
• Language: English; French; Japanese
• Published: 10.11.1994
• Edition: 5
• Subjects: BASIC ELECTRIC ELEMENTS; DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL ANALOGUE/DIGITAL CONVERTERS; OPTICAL LOGIC ELEMENTS; OPTICS; PHYSICS; SEMICONDUCTOR DEVICES; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF

To suppress the optical leak current Ioff sufficiently and thereby to attain a high ratio of ON/OFF currents, at least one of the shortest distances from an arbitrary intersection of the contour lines of the gate electrode (131) and the drain electrode (141) to the intersections of the contour lines of the gate electrode (131) and the source electrode (151) is longer than the shortest distance between the part of the contour lines of the gate electrode (131) which is superposed on the drain electrode (141) and the part which is superposed on the source electrode (151). Pour supprimer le courant de fuite optique Ioff de manière suffisante et obtenir un rapport de courants MARCHE/ARRET élevé, il est nécessaire qui au moins les plus courtes distances entre une intersection arbitraire des lignes de contour de l'électrode de commande (131) et de l'électrode de drain (141) et les intersections des lignes de contour de l'électrode de commande (131) et de l'électrode source (151) soient supérieures à la distance la plus courte entre la partie des lignes de contour de l'électrode de commande (131) montée sur l'électrode de drain (141) et la partie montée sur l'électrode source (151).