AN IMPROVED PROCESS FOR SINTERING ALUMINUM NITRIDE TO A HIGH THERMAL CONDUCTIVITY AND RESULTANT SINTERED BODIES

Sintered aluminum nitride bodies having a TC of at least 200 W/m.K are prepared by sintering under non-reducing conditions and controlling interrelated parameters such as binder burnout atmosphere, heating rate, sintering temperature, time at sintering temperature, cooling rate and cooling temperatu...

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Bibliographic Details
Main Authors MILLS, LYNNE, K, GUITON, THERESA, A
Format Patent
LanguageEnglish
French
Published 13.10.1994
Edition5
Subjects
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Summary:Sintered aluminum nitride bodies having a TC of at least 200 W/m.K are prepared by sintering under non-reducing conditions and controlling interrelated parameters such as binder burnout atmosphere, heating rate, sintering temperature, time at sintering temperature, cooling rate and cooling temperature. The sintered bodies may also have a TC in excess of 270 W/m.K. Des corps en nitrure d'aluminium frittés ayant un coefficient de température d'au moins 200 W/m.K sont préparés par frittage dans des conditions non-réductrices et sous contrôle des paramètres interdépendants tels que l'atmosphère de combustion du liant, la vitesse de chauffe, la température de frittage, la durée de la température de frittage, la vitesse de refroidissement et la température de refroidissement. Les corps frittés peuvent avoir un coefficient de température supérieur à 270 W/m.K.
Bibliography:Application Number: WO1994US01688