PURGE GAS IN WAFER COATING AREA SELECTION

• Main Authors: KANG, SIEN, G, UHER, FRANK, O, TURNER, NORMAN, L, CHOW, RAYMOND, L, SCHOLZ, FREDERICK, J, SCHMITZ, JOHANNES, J, SELBREDE, STEVEN, C
• Format: Patent
• Language: English
• Published: 08.07.1993
• Subjects: CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

Apparatus including a support (223, 225) and purge gas supply (241) prevents edge and backside coating on a wafer (227) in manufacture of integrated circuits. Various enclosure elements and methods are disclosed for containing and directing purge gas, and a CVD system is provided incorporating the e...