PURGE GAS IN WAFER COATING AREA SELECTION

• Main Authors: KANG, SIEN, G, UHER, FRANK, O, TURNER, NORMAN, L, CHOW, RAYMOND, L, SCHOLZ, FREDERICK, J, SCHMITZ, JOHANNES, J, SELBREDE, STEVEN, C
• Format: Patent
• Language: English
• Published: 08.07.1993
• Subjects: CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

Apparatus including a support (223, 225) and purge gas supply (241) prevents edge and backside coating on a wafer (227) in manufacture of integrated circuits. Various enclosure elements and methods are disclosed for containing and directing purge gas, and a CVD system is provided incorporating the elements of the invention. On décrit un appareil comportant un support (223, 225) et une alimentation de gaz purgeur (241) qui empêche le revêtement marginal et arrière d'une tranche (227) dans la fabrication de circuits intégrés. On décrit également divers éléments de type boîtiers et des procédés prévus respectivement pour contenir et diriger le gaz purgeur, ainsi qu'un système de déposition chimique en phase vapeur (DCV) incorporant les éléments de l'invention.